supersot sot23 pnp silicon power (switching) transistors issue 3 june 1996 features * 625mw power dissipation *i c cont 2.5a *i c up to 10a peak pulse current * excellent h fe characteristics up to 10a (pulsed) * extremely low saturation voltage e.g. 10mv typ. * exhibits extremely low equivalent on-resistance; r ce(sat) absolute maximum ratings parameter symbol fmmt 717 fmmt 718 fmmt 720 fmmt 722 fmmt 723 unit collector-base voltage v cbo -12 -20 -40 -70 -100 v collector-emitter voltage v ceo -12 -20 -40 -70 -100 v emitter-base voltage v ebo -5 -5 -5 -5 -5 v peak pulse current** i cm -10 -6 -4 -3 -2.5 a continuous collector current i c -2.5 -1.5 -1.5 -1.5 -1 a base current i b -500 ma power dissipation at t amb =25c* p tot 625 mw operating and storage temperature range t j :t stg -55 to +150 c *maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for these devices c b e 3 - 159 fmmt717 fmmt718 fmmt720 fmmt722 fmmt723 device type complement partmarking r ce(sat) fmmt717 fmmt617 717 72m w at 2.5a fmmt718 fmmt618 718 97m w at 1.5a fmmt720 fmmt619 720 163m w at 1.5a fmmt722 ? 722 - fmmt723 fmmt624 723 - dim millimeters inches min max min max a 2.67 3.05 0.105 0.120 b 1.20 1.40 0.047 0.055 c ? 1.10 ? 0.043 d 0.37 0.53 0.0145 0.021 f 0.085 0.15 0.0033 0.0059 g nom 1.9 nom 0.075 k 0.01 0.10 0.0004 0.004 l 2.10 2.50 0.0825 0.0985 n nom 0.95 nom 0.37 zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161-627 5105 (sales), (44)161-627 4963 (general enquiries) fax: (44)161-627 5467 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? zetex plc 1997 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 internet: fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service.
0.0 0.2 0.4 0.6 0.8 1.0 collector current i c /i b =10 collector current 10a collector current collector current 0.0 i c /i b =20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ce =2v 0 450 225 v ce =2v 0.2 0.0 1.0 0.8 0.6 0.4 10 1.0 0.1 0.01 single pulse test t amb = 25 deg c v ce (volts) typical characteristics -55c 100c 25c 25c 100c -55c 25c 100c -55c 25c 100c -55c d.c. 1s 100ms 10ms 1ms 100 m s 0.1 10a 1ma 10a 1ma 1ma 10a 1ma safe operating area 0.6 0.2 0.4 1.4 1.6 10m 1 1m 10m v ce(sat) v i c i c - collector current (a) 100m 10 1 i c /i b =10 i c /i b =20 i c /i b =50 +25c 100m v ce(sat) vs i c 10ma 100ma 1a v be(sat) vs i c 10ma 100ma 1a h fe vs i c 10ma 100ma 1a v be(on) vs i c 10ma 100ma 1a 1.0 10 100 fmmt720 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol fmmt722 fmmt723 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br) cbo -70 -150 -100 -200 v i c =-100 m a collector-emitter breakdown voltage v (br) ceo -70 -125 -100 -160 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 -8.8 -5 -8.8 v i e =-100 m a collector cut-off current i cbo -100 -100 na na v cb =-60v v cb =-80v emitter cut-off current i ebo -100 -100 na v eb =-4v collector emitter cut-off current i ces -100 -100 na na v ces =-60v v ces =-80v collector-emitter saturation voltage v ce(sat) -35 -135 -140 -175 -50 -200 -220 -260 -50 -125 -210 -80 -200 -330 mv mv mv mv mv mv i c =-0.1a, i b =-10ma* i c =-0.5a, i b =-20ma* i c =-0.5a, i b =-50ma* i c =-1a, i b =-100ma* i c =-1a, i b =-150ma* i c =-1.5a, i b =-200ma* base-emitter saturation voltage v be(sat) -0.94 -1.05 -0.89 -1.0 v i c =-1a, i b =-150ma* i c =-1.5a, i b =-200ma* base-emitter turn-on voltage v be(on) -0.78 -1.0 -0.71 -1.0 v i c =-1a, v ce =-10v* i c =-1.5a, v ce =-5v* static forward current transfer ratio h fe 300 300 175 40 470 450 275 60 10 300 300 250 475 450 375 250 30 i c =-10ma, v ce =-5v* i c =-10ma, v ce =-10v* i c =-0.1a, v ce =-5v* i c =-0.1a, v ce =-10v* i c =-0.5a, v ce =-10v* i c =-1a, v ce =-5v* i c =-1a, v ce =-10v* i c =-1.5a, v ce =-5v* i c =-1.5a, v ce =-10v* i c =-3a, v ce =-5v* transition frequency f t 150 200 150 200 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c ob o 14 20 13 20 pf v cb =-10v, f=1mhz turn-on time t (on) 40 50 ns v cc =-50v, i c =-0.5a i b1 =i b2 =-50ma turn-off time t (off) 700 760 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% fmmt722 fmmt723 3 - 164 3 - 165
-55c 100c 25c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 collector current i c /i b =10 collector current collector current collector current 25c 100c -55c 25c 100c -55c i c /i b =30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ce =2v 0 450 225 25c 100c -55c v ce =2v 0.2 0.0 1.0 0.8 0.6 0.4 d.c. 1s 100ms 10ms 1ms 100 m s 10 1.0 0.1 0.01 v ce (volts) safe operating area typical characteristics 0.1 10a 1ma 10a 1ma 10a 1ma 10a 1ma 1.2 1.4 0.6 0.5 0.4 0.4 0.3 0.2 0.1 0.0 1.4 100m 1 10m 1m 1m 10m 100m 1 10 i c - collector current (a) v ce(sat) v ic i c /i b =10 i c /i b =30 i c /i b =50 +25c 10ma 100ma 1a v ce(sat) vs i c v be(sat) vs i c 10ma 100ma 1a 10ma 100ma 1a h fe vs i c v be(on) vs i c 10ma 100ma 1a 1.0 10 100 single pulse test t amb = 25 deg c fmmt718 0.0 0.2 0.4 0.6 0.8 1.0 collector current i c /i b =5 collector current 10a collector current 10a collector current 10a collector current 10a i c /i b =10 i c /i b =20 i c /i b =50 25c i c /i b =10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ce =5v 450 225 v ce =5v 0.2 0.0 1.0 0.8 0.6 0.4 10 1.0 0.1 0.01 single pulse test t amb = 25 deg c v ce (volts) typical characteristics -55c 100c 25c 25c 100c -55c 25c 100c -55c 25c 100c -55c d.c. 1s 100ms 10ms 1ms 1ma 0.1 1ma 1ma 1ma 10a 1ma 0.0 0.1 0.2 0.3 0.4 0.5 0.0 safe operating area i c /i b =5 0.6 0.6 0.5 0.4 0.3 0.2 0.1 1.4 1.6 1.2 10ma 1a 100ma v be(sat) vs i c 10ma 100ma 1a v ce(sat) vs i c 10ma 100ma 1a v be(sat) vs i c 10ma 1a 100ma h fe vs i c v be(on) vs i c 10ma 100ma 1a 100 m s 1 10 100 fmmt722 3 - 166 3 - 163
derating curve * reference above figures, devices were mounted on a 15mmx15mm ceramic substrate maximum transient thermal resistance fmmt617 fmmt624 fmmt618 fmmt625 fmmt619 thermal characteristics and derating information fmmt717 fmmt722 fmmt718 fmmt723 fmmt720 supersot series 3 - 158
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